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| SID01L60 Elektronische Bauelemente 1A, 600V,RDS(ON)12[ N-Channel Enhancement Mode Power Mos.FET Description The SID01L60 (through-hole version) is universally preferred for all commercial-industrial surface mount applications and suited for AC/DC converters. 5.60.2 6.60.2 5.30.2 TO-251 2.30.1 0.50.05 7.00.2 Features * RoHs Compliant 1.20.3 0.750.15 7.00.2 * Simple Drive Requirement * Fast Switching Speed * Repetitive Avalanche Rated 0.60.1 2.3REF. 0.50.1 G D S Dimensions in millimeters D G S Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current,VGS@10V Continuous Drain Current,VGS@10V Pulsed Drain Current 1 Symbol V DS V GS ID@TC=25 C ID@TC=100C IDM PD@TC=25 C o o o Ratings 600 30 1 0.8 3 29 0.232 Unit V V A A A W W/ C o Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Operating Junction and Storage Temperature Range 2 EAS IAR EAR Tj, Tstg 0.5 1 0.5 -55~+150 mJ A mJ o C Thermal Data Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient http://www.SeCoSGmbH.com/ Symbol Max. Max. Rthj-c Rthj-a Ratings 4.3 110 o o Unit C /W C /W Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 4 SID01L60 Elektronische Bauelemente 1A, 600V,RDS(ON)12[ N-Channel Enhancement Mode Power Mos.FET Electrical Characteristics( Tj=25 C Unless otherwise specified) Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25 C ) Drain-Source Leakage Current(Tj=150C) Static Drain-Source On-Resistance 3 o o o Symbol BVDSS BVDS/ Tj VGS(th) IGSS IDSS RDS(ON) Gfs Qg Qgs Qgd Td(ON) Tr Td(Off) Tf Ciss Coss Crss Min. 600 _ Typ. _ Max. _ Unit V V/ C V nA uA uA [ o Test Condition VGS=0V, ID=250uA Reference to 25 C, ID=1mA VDS=VGS, ID=250uA VGS= 30V VDS=60 0V,VGS=0 VDS=480 V,VGS=0 VGS=10V, ID=0.5A VDS=10V, ID=0.5A ID=1 A VDS=480V VGS= 10V o 0.8 _ _ _ _ _ _ 2.0 _ _ _ _ 4.0 100 10 100 12 _ _ _ _ Forward Transconductance Total Gate Charge3 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time3 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance _ _ _ _ _ _ _ _ _ _ _ 0.8 4 1 1.1 6.6 5 11.7 9.2 170 30.7 5.1 S nC _ _ _ _ _ _ _ VDD=300V ID=1 A nS VGS=10V RG=3.3[ RD=300 [ pF VGS=0V VDS=25V f=1.0MHz Source-Drain Diode Parameter Forward On Voltage 3 Continuous Source Current(Body Diode) Pulsed Source Current(Body Diode) 1 Symbol VSD IS Min. _ _ Typ. _ _ _ Max. 1.2 Unit V A A Test Condition IS=1A, VGS=0V.Tj=25C VD=VG=0V,VS=1.2 V o 1 5 ISM _ Notes: 1. Pulse width limited by safe operating area. 2. Staring Tj=25 : , VDD=50V, L=10mH, RG=25 L , IAS=1.0A. 3. Pulse width 300us, duty cycle 2%. http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 2 of 4 SID01L60 Elektronische Bauelemente 1A, 600V,RDS(ON)12[ N-Channel Enhancement Mode Power Mos.FET Characteristics Curve Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. Normalized BVDSS v.s. Junction Temperature Fig 4. Normalized On-Resistance v.s. Junction Temperature http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Fig 5. Forward Characteristics of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature Any changing of specification will not be informed individual Page 3 of 4 SID01L60 Elektronische Bauelemente 1A, 600V,RDS(ON)12[ N-Channel Enhancement Mode Power Mos.FET Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 4 of 4 |
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